Transferring and Identification of Single- and Few-Layer Graphene on Arbitrary Substrates

被引:501
作者
Reina, Alfonso [2 ]
Son, Hyungbin [3 ]
Jiao, Liying [1 ]
Fan, Ben [1 ]
Dresselhaus, Mildred S. [3 ,4 ]
Liu, ZhongFan [1 ]
Kong, Jing [3 ]
机构
[1] Peking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, CNST,BNLMS, Beijing 100871, Peoples R China
[2] MIT, Dept Mat Sci, Cambridge, MA 02139 USA
[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[4] MIT, Dept Phys, Cambridge, MA 02139 USA
关键词
D O I
10.1021/jp807380s
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The transferring and identification of single- and few- layer graphene sheets from SiO2/Si substrates to other types of substrates is presented. Features across large areas (similar to cm(2)) having single and few-layer graphene flakes, obtained by the microcleaving of highly oriented pyrolytic graphite (HOPG), can be transferred reliably. This method enables the fast localization of graphene sheets on substrates on which optical microscopy does not allow direct and fast visualization of the thin graphene sheets. No major morphological deformations, corrugations, or defects are induced on the graphene films when transferred to the target surface. Moreover, the differentiation between single and bilayer graphene via the G' (similar to 2700 cm(-1)) Raman peak is demonstrated on various substrates. This approach opens up possibilities for the fabrication of graphene devices on a substrate material other than SiO2/Si.
引用
收藏
页码:17741 / 17744
页数:4
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