Angular Dependences of Silicon Sputtering by Gallium Focused Ion Beam

被引：7

作者：

Bachurin, V. I. ^{[1
]}

Zhuravlev, I. V. ^{[1
]}

Pukhov, D. E. ^{[1
]}

Rudy, A. S. ^{[1
]}

Simakin, S. G. ^{[1
]}

Smirnova, M. A. ^{[1
]}

Churilov, A. B. ^{[1
]}

机构：

[1] Russian Acad Sci, Valiev Inst Phys & Technol, Yaroslavl Branch, Yaroslavl 150007, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION | 2020年 / 14卷 / 04期

关键词：

sputtering; surface layers; focused ion beam; secondary ion mass spectrometry; scanning Auger electron spectroscopy; IMPLANTATION; SIMULATION; YIELD; ANGLE; GA; SI;

D O I：

10.1134/S1027451020040229

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Angular dependences of the surface layer composition and the sputtering yield of silicon upon irradiation of the surface with a focused beam of gallium ions with an energy of 30 keV are obtained. The surface composition is analyzed by scanning Auger electron spectroscopy (SAES) and secondary ion mass spectrometry (SIMS). The sputtering yields are determined by measuring the volume of sputtering craters and irradiation doses. It is found that the content of gallium in the surface layer is about 30 at % with incidence angles close to the normal. With incidence angles greater than 30 degrees, the concentration of gallium decreases quite sharply. The angular dependence of the sputtering yield of silicon does not correlate with the content of gallium in the surface layer and is rather well described by the cascade sputtering mechanism proposed by P. Sigmund.

引用

页码：784 / 790

页数：7

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