Configuration and interaction of misfit dislocations in Si1-xGex/Si(001) epilayer heterostructures grown by gas- source MBE

被引：0
|
作者：
Lee, WJ
Staton-Bevan, AE
机构：
[1] Pusan Natl Univ, Pusan Branch Korea Basic Sci Inst, Kumjung Ku, Pusan 609735, South Korea
[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England
来源：
METALS AND MATERIALS-KOREA | 1999年 / 5卷 / 03期
关键词：
misfit dislocation; dislocation configuration; dislocation interaction; Si1-xGex epilayer; GS-MBE;
D O I：
10.1007/BF03026072
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transmission electron microscopy has been employed to investigate dislocation configurations and interactions in Si1-xGex/Si(001) epilayer heterostructures grown by Gas-Source MBE. Thick Si1-xGex/Si(001) epilayers had 3-dimensional configuration of misfit dislocations in the entire structure. The main arrays of misfit dislocations at each single Si1-xGex/Si(001) interface were along the two [110] directions, being 60 degrees type in character. Three-way dislocation configuration, resulting from the interaction between dislocations, was observed at the interface. Observation of [001] oriented dislocations having striation lines was new in low misfit (1<%) Si1-xGex/Si(001) epilayer heterostructures.
引用
收藏
页码：231 / 235
页数：5
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