The effect of metallization layers on single event susceptibility

被引：33

作者：

Kobayashi, AS ^{[1
]}

Ball, DR

Warren, KM

Reed, RA

Haddad, N

Mendenhall, MH

Schrimpf, RD

Weller, RA

机构：

[1] Vanderbilt Univ, Nashville, TN 37237 USA

[2] BAE Syst, Manassas, VA 20110 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 06期

关键词：

energy deposition; Geant4; ion track; metal-oxide semiconductor (MOS); metallization layers; Monte Carlo simulation; radiation effects; single-event effects; tungsten;

D O I：

10.1109/TNS.2005.860688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the effects of metallization layers on the radiation hardness of an epitaxial CMOS memory technology using Monte Carlo simulations. A geometrically and compositionally realistic three-layer metallization scheme is employed in detailed radiation transport simulations that include contributions from discrete delta-rays and nuclear reactions. The presence of high-Z plugs used to connect different metallization layers can have a significant effect on the single-event sensitivity depending on the location of the high-Z material relative to the sensitive region of the underlying device.

引用

页码：2189 / 2193

页数：5

共 9 条

[1] GEANT4-a simulation toolkit [J].

Agostinelli, S ;

Allison, J ;

Amako, K ;

Apostolakis, J ;

Araujo, H ;

Arce, P ;

Asai, M ;

Axen, D ;

Banerjee, S ;

Barrand, G ;

Behner, F ;

Bellagamba, L ;

Boudreau, J ;

Broglia, L ;

Brunengo, A ;

Burkhardt, H ;

Chauvie, S ;

Chuma, J ;

Chytracek, R ;

Cooperman, G ;

Cosmo, G ;

Degtyarenko, P ;

Dell'Acqua, A ;

Depaola, G ;

Dietrich, D ;

Enami, R ;

Feliciello, A ;

Ferguson, C ;

Fesefeldt, H ;

Folger, G ;

Foppiano, F ;

Forti, A ;

Garelli, S ;

Giani, S ;

Giannitrapani, R ;

Gibin, D ;

Cadenas, JJG ;

González, I ;

Abril, GG ;

Greeniaus, G ;

Greiner, W ;

Grichine, V ;

Grossheim, A ;

Guatelli, S ;

Gumplinger, P ;

Hamatsu, R ;

Hashimoto, K ;

Hasui, H ;

Heikkinen, A ;

Howard, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 506 (03) :250-303

[2] Role of heavy-ion nuclear reactions in determining on-orbit single event error rates [J].

Howe, CL ;

Weller, RA ;

Reed, RA ;

Mendenhall, MH ;

Schrimpf, RD ;

Warren, KM ;

Ball, DR ;

Massengill, LW ;

LaBel, KA ;

Howard, JW ;

Haddad, NF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2182-2188

[3] Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon [J].

Kobayashi, AS ;

Sternberg, AL ;

Massengill, LW ;

Schrimpf, RD ;

Weller, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3312-3317

[4] Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design [J].

Olson, BD ;

Ball, DR ;

Warren, KM ;

Massengill, LW ;

Haddad, NF ;

Doyle, SE ;

McMorrow, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2132-2136

[5] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[6]

*SYN, 2004, TCAD TOOLS

[7]

WARREN K, 2005, IEEE T NUCL SCI, V52

[8] Evaluating average and atypical response in radiation effects simulations [J].

Weller, RA ;

Sternberg, AL ;

Massengill, LW ;

Schrimpf, RD ;

Fleetwood, DM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) :2265-2271

[9]

Ziegler J. F., 1985, The Stopping of Ions in Matter, P93, DOI DOI 10.1007/978

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