Thickness and Nb-doping effects on ferro- and piezoelectric properties of highly a-axis-oriented Nb-doped Pb(Zr0.3Ti0.7)O3 films

被引：28
作者：
Zhu, Zhi-Xiang [1 ]
Ruangchalermwong, C. [1 ,2 ]
Li, Jing-Feng [1 ]
机构：
[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[2] Prince Songkla Univ, Dept Phys, Hat Yai 90112, Songkhla, Thailand
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 05期
关键词：
D O I：
10.1063/1.2975164
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tetragonal Nb-doped Pb(Zr0.3Ti0.7)O-3 (PNZT) films with a lead oxide seeding layer were deposited on the Pt(111)/Ti/SiO2/Si(100) substrates by sol-gel processing. The as-grown PNZT films with thicknesses ranging from about 0.08 to 0.78 mu m show highly a-axis preferential orientation, and their ferroelectric and piezoelectric properties improved with increasing film thickness. Due to the combined effects of Nb doping and a-axis texturing as well as reduced substrate constraint, a high d(33) constant up to 196 pm/V was obtained for PNZT film at 0.78 mu m in addition to a large remnant polarization of 69 mu C/cm(2). This well a-axis-oriented PNZT films on platinized Si with a high piezoresponse are suitable for the fabrication of microelectromechanical devices. (C) 2008 American Institute of Physics.
引用
收藏
页数：5
相关论文
共 18 条
[1]   Ferroelectric properties of sol-gel delivered epitaxial Pb(Zrx,Ti1-x)O3 thin films on Si using epitaxial g-Al2O3 Layers -: art. no. 202906 [J].
Akai, D ;
Yokawa, M ;
Hirabayashi, K ;
Matsushita, K ;
Sawada, K ;
Ishida, M .
APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3
[2]   Ferroelectric characteristics of oriented Pb(Zr1-xTix)O3 films [J].
Chen, SY ;
Sun, CL .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) :2970-2974
[3]   Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film [J].
Cho, CR ;
Lee, WJ ;
Yu, BG ;
Kim, BW .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) :2700-2711
[4]   Single-crystal Nb-doped Pb(Zr,Ti)O3 thin films on Nb-doped SrTiO3 wafers with different orientations [J].
Gong, W ;
Li, JF ;
Chu, XC ;
Gui, ZL ;
Li, LT .
APPLIED PHYSICS LETTERS, 2004, 85 (17) :3818-3820
[5]   Preparation and characterization of sol-gel derived (100)-textured Pb(Zr,Ti)O3 thin films:: PbO seeding role in the formation of preferential orientation [J].
Gong, W ;
Li, JF ;
Chu, XC ;
Gui, ZL ;
Li, LT .
ACTA MATERIALIA, 2004, 52 (09) :2787-2793
[6]   Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of Pb(ZrxTi1-x)O3 thin films [J].
Gong, W ;
Li, JF ;
Chu, XC ;
Gui, ZL ;
Li, LT .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :590-595
[7]  
Haccart I, 2003, THIN SOLID FILMS, V423, P235
[8]  
Jaffe B., 1971, PIEZOELECTRIC CERAMI
[9]   Evaluation of intrinsic and extrinsic contributions to the piezoelectric properties of Pb(Zr1-xTX)O3 thin films as a function of composition [J].
Kim, DJ ;
Maria, JP ;
Kingon, AI ;
Streiffer, SK .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5568-5575
[10]   Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52Ti0.48)O3 films on Si and SrTiO3 substrates [J].
Kim, DM ;
Eom, CB ;
Nagarajan, V ;
Ouyang, J ;
Ramesh, R ;
Vaithyanathan, V ;
Schlom, DG .
APPLIED PHYSICS LETTERS, 2006, 88 (14)
12