Fabrication and Characterization of Self-aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

被引：0

作者：

Lo, Chien-Fong ^{[1
]}

Chang, Chih-Yang ^{[2
]}

Chen, S. -H. ^{[3
]}

Chang, C. -M. ^{[3
]}

Wang, S. -Y. ^{[3
]}

Chyi, J. -I. ^{[3
]}

Kravchenko, I. I. ^{[4
]}

Pearton, S. J. ^{[2
]}

Ren, F. ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci Engn, Gainesville, FL 32611 USA

[3] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan

[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53) | 2011年 / 41卷 / 06期

关键词：

TEMPERATURE;

D O I：

10.1149/1.3629960

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga0.58As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm(2) and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 mu m(2) emitter area were obtained. A unity gain cut-off frequency (f(T)) of 260 GHz and a maximum oscillation frequency (f(max)) of 485 GHz at J(C) = 302 kA/cm(2) were achieved.

引用

页码：117 / 127

页数：11

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