Effect of Heat Diffusion During State Transitions in Resistive Switching Memory Device Based on Nickel-Rich Nickel Oxide Film

被引：10

作者：

Hu, S. G. ^{[1
]}

Liu, Yang ^{[1
]}

Chen, T. P. ^{[2
]}

Liu, Zhen ^{[2
]}

Yang, Ming ^{[2
]}

Yu, Qi ^{[1
]}

Fung, S. ^{[3
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] Univ Hong Kong, Dept Phys, Pok Fu Lam, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Heat diffusion; mechanism competition; nickel oxide; resistive random access memory (RRAM);

D O I：

10.1109/TED.2012.2186300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the formation of filament is the dominant process. The switching is easier to occur with a shorter off time between pulses, indicating that heat diffusion plays an important role. On the other hand, in the switching from the LRS to the HRS during the reset process, there is a competition between the formation and deformation of filament, which is much stronger than that in the set process. The heat diffusion during the off time between pulses affects both the formation and deformation of filaments. Thus, there is no definite relationship in statistics between the off time and the occurrence of the reset switching.

引用

页码：1558 / 1562

页数：5

共 15 条

[1] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[2]

Fujii T., 2005, APPL PHYS LETT, V86, P1

[3]

Kim Y. S., 2011, APPL PHYS LETT, V98

[4] Theoretical current-voltage characteristics of ferroelectric tunnel junctions [J].

Kohlstedt, H ;

Pertsev, NA ;

Contreras, JR ;

Waser, R .

PHYSICAL REVIEW B, 2005, 72 (12)

[5] Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices [J].

Nardi, Federico ;

Cagli, Carlo ;

Spiga, Sabina ;

Ielmini, Daniele .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (06) :719-721

[6] Strong electron correlation effects in nonvolatile electronic memory devices -: art. no. 033510 [J].

Rozenberg, MJ ;

Inoue, IH ;

Sánchez, MJ .

APPLIED PHYSICS LETTERS, 2006, 88 (03) :1-3

[7] Nonvolatile memory with multilevel switching: A basic model [J].

Rozenberg, MJ ;

Inoue, IH ;

Sánchez, MJ .

PHYSICAL REVIEW LETTERS, 2004, 92 (17) :178302-1

[8] Interface resistance switching at a few nanometer thick perovskite manganite active layers [J].

Sawa, A. ;

Fujii, T. ;

Kawasaki, M. ;

Tokura, Y. .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[9] Resistive switching in transition metal oxides [J].

Sawa, Akihito .

MATERIALS TODAY, 2008, 11 (06) :28-36

[10] Reproducible resistance switching in polycrystalline NiO films [J].

Seo, S ;

Lee, MJ ;

Seo, DH ;

Jeoung, EJ ;

Suh, DS ;

Joung, YS ;

Yoo, IK ;

Hwang, IR ;

Kim, SH ;

Byun, IS ;

Kim, JS ;

Choi, JS ;

Park, BH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5655-5657

← 1 2 →