Effect of non-magnetic Al3+ doping on structural, optical, electrical, dielectric and magnetic properties of BiFeO3 ceramics

被引:36
|
作者
Chandel, Shilpi [1 ]
Thakur, Preeti [2 ]
Thakur, Shyam Singh [3 ]
Kanwar, Vivek [4 ]
Tomar, Monika [5 ]
Gupta, Vinay [5 ]
Thakur, Atul [6 ]
机构
[1] Shoolini Univ, Sch Phys & Mat Sci, Solon 173212, India
[2] Amity Univ Gurgaon, Amity Sch Appl Sci, Gurgaon 122413, Haryana, India
[3] Nanotechnol Wing, Innovat Sci Res Soc, Shimla 171001, India
[4] Natl Inst Technol, Elect & Commun Engn, Hamirpur, India
[5] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[6] Amity Univ Gurgaon, Amity Ctr Nanotechnol, Gurgaon 122413, Haryana, India
关键词
Ferroelectrics; Citrate precursor method; Multiferroics; Dielectric studies; CO-SUBSTITUTED BIFEO3; MULTIFERROIC PROPERTIES; BISMUTH FERRITE; THIN-FILMS; TRANSITION; BEHAVIOR; MN; FERROELECTRICS; RAMAN; PR;
D O I
10.1016/j.ceramint.2017.12.053
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Pure BiFeO3 (BFO) and Al doped BFO samples were synthesized via citrate precursor method and sintered at 500 degrees C for two hours. Effect of Al doping on the structural, optical, electrical, dielectric and magnetic properties were investigated. X-ray diffraction (XRD) confirmed the distorted rhombohedral structure without any merging of peaks which indicates no structural transformation. Average crystallite size was found to be in the range 28-39 nm. Field emission scanning electron microscopy (FESEM) images illustrated the dense, agglomerated, spherically shaped with reduced grain size nanoparticles. Increased value of dielectric constant with low dielectric tangent loss was observed for the Al doped BFO samples. The value of dielectric constant was found to be 51 at 100 kHz for x = 0.1 sample. Temperature dependent dielectric constant showed a dielectric anomaly, indicating the antiferromagnetic transition. The remanent polarization and the corresponding coercive field for x = 0.1 was found to be 0.0625 mu C/cm(2) and 56.154 kV/cm at an operating voltage of 1000 V. The improved electrical properties with low leakage current density were ascribed to the stabilization of the pervoskite structure and reduced oxygen vacancies.
引用
收藏
页码:4711 / 4718
页数:8
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