Extreme g-factor anisotropy of low mobility 2D hole gas in GaAs/In0.2Ga0.8As/GaAs quantum well

被引：5
作者：
Soldatov, I. V. [1 ,2 ]
Germanenko, A. V. [2 ]
Kozlova, N. [1 ]
机构：
[1] IFW Dresden, Leibnitz Inst Metall Mat, D-01171 Dresden, Germany
[2] Ural Fed Univ, Inst Nat Sci, Ekaterinburg 620000, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2014年 / 57卷
关键词：
MASS;
D O I：
10.1016/j.physe.2013.10.035
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The Shubnikov-de Haas (SdH) oscillations in low-mobility two-dimensional (20) hole gas in a single quantum well GaAs/In0.2Ga0.8As/GaAs in magnetic fields up to 50 T were investigated. Analyzing the behavior of those oscillations within the framework of highly anisotropic spin splitting of the Landau levels, we obtained the values of the out-of-plane and in-plane g-factor of vertical bar g(perpendicular to)vertical bar = 4.4 +/- 0.6 and vertical bar g(parallel to)vertical bar = 0.4 +/- 0.1 respectively. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：193 / 197
页数：5
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