Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures

被引：66

作者：

Wei, Wei ^{[1
]}

Dai, Ying ^{[1
]}

Niu, Chengwang ^{[2
,3
,4
]}

Li, Xiao ^{[5
]}

Ma, Yandong ^{[6
]}

Huang, Baibiao ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[2] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[3] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany

[4] JARA, D-52425 Julich, Germany

[5] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[6] Jacobs Univ Bremen, Dept Phys & Earth Sci, D-28759 Bremen, Germany

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 43期

基金：

美国国家科学基金会;

关键词：

AB-INITIO; GAS; MODULATION; MONOLAYER; MOS2;

D O I：

10.1039/c5tc02975a

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On the basis of density functional electronic calculations, heterostructures of single-layer GaS and GaSe were found to exhibit novel physical properties due to their specific interfacing effects and versatile structural features. We verified that electrons and holes can be distributed on the opposite constituent of the heterostructures, forming a type-II band alignment and enabling physical separation of excitons, which is highly desirable in applications such as solar energy conversion. We found the Rashba effects in the two-dimensional GaS/GaSe heterostructures due to the breaking of inversion symmetry and the intrinsic polarization, which reveals new possibility in applications in spintronic and electronic nanodevices. In addition, we confirmed that the electronic properties of GaS/GaSe van der Waals heterostructures can be continuously tuned by external strain.

引用

页码：11548 / 11554

页数：7

共 45 条

[1] Systematic investigation on topological properties of layered GaS and GaSe under strain [J].

An, Wei ;

Wu, Feng ;

Jiang, Hong ;

Tian, Guang-Shan ;

Li, Xin-Zheng .

JOURNAL OF CHEMICAL PHYSICS, 2014, 141 (08)

[2] Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials [J].

Bernardi, Marco ;

Palummo, Maurizia ;

Grossman, Jeffrey C. .

NANO LETTERS, 2013, 13 (08) :3664-3670

[3] Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2-MoSe2 van der Waals Heterostructure [J].

Ceballos, Frank ;

Bellus, Matthew Z. ;

Chiu, Hsin-Ying ;

Zhao, Hui .

ACS NANO, 2014, 8 (12) :12717-12724

[4] Spin-orbit coupling with ultrasoft pseudopotentials: Application to Au and Pt [J].

Dal Corso, A ;

Conte, AM .

PHYSICAL REVIEW B, 2005, 71 (11)

[5] Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices [J].

Dean, C. R. ;

Wang, L. ;

Maher, P. ;

Forsythe, C. ;

Ghahari, F. ;

Gao, Y. ;

Katoch, J. ;

Ishigami, M. ;

Moon, P. ;

Koshino, M. ;

Taniguchi, T. ;

Watanabe, K. ;

Shepard, K. L. ;

Hone, J. ;

Kim, P. .

NATURE, 2013, 497 (7451) :598-602

[6] Crystal symmetry and pressure effects on the valence band structure of γ-InSe and ε-GaSe:: Transport measurements and electronic structure calculations -: art. no. 125206 [J].

Errandonea, D ;

Segura, A ;

Manjón, FJ ;

Chevy, A ;

Machado, E ;

Tobias, G ;

Ordejón, P ;

Canadell, E .

PHYSICAL REVIEW B, 2005, 71 (12)

[7]

Gautam UK, 2005, J AM CHEM SOC, V127, P3658, DOI 10.1021/ja042294k

[8]

Gong YJ, 2014, NAT MATER, V13, P1135, DOI [10.1038/NMAT4091, 10.1038/nmat4091]

[9] Semiempirical GGA-type density functional constructed with a long-range dispersion correction [J].

Grimme, Stefan .

JOURNAL OF COMPUTATIONAL CHEMISTRY, 2006, 27 (15) :1787-1799

[10] Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates [J].

Hu, PingAn ;

Wang, Lifeng ;

Yoon, Mina ;

Zhang, Jia ;

Feng, Wei ;

Wang, Xiaona ;

Wen, Zhenzhong ;

Idrobo, Juan Carlos ;

Miyamoto, Yoshiyuki ;

Geohegan, David B. ;

Xiao, Kai .

NANO LETTERS, 2013, 13 (04) :1649-1654

← 1 2 3 4 5 →