Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates

被引：20

作者：

Sioncke, Sonja ^{[1
]}

Delabie, Annelies ^{[1
]}

Brammertz, Guy ^{[1
]}

Conard, Thierry ^{[1
]}

Franquet, Alexis ^{[1
]}

Caymax, Matty ^{[1
]}

Urbanzcyk, Adam ^{[1
]}

Heyns, Marc ^{[1
,3
]}

Meuris, Marc ^{[1
]}

van Hemmen, J. L. ^{[2
]}

Keuning, W. ^{[2
]}

Kessels, W. M. M. ^{[2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[3] Katholieke Univ Leuven, Dept Met & Mat Engn, Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 04期

关键词：

alumina; atomic layer deposition; dielectric materials; ellipsometry; Fermi level; gallium arsenide; III-V semiconductors; plasma materials processing; X-ray fluorescence analysis; X-ray photoelectron spectra; CAPACITANCE-VOLTAGE; OXIDE; GROWTH; NUCLEATION; CHEMISTRY; SURFACE; SI;

D O I：

10.1149/1.3076143

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A good dielectric layer on the GaAs substrate is one of the critical issues to be solved for introducing GaAs as a candidate to replace Si in semiconductor processing. In literature, promising results have been shown for Al2O3 on GaAs substrates. Therefore, atomic layer deposition (ALD) of Al2O3 has been studied on GaAs substrates. We have been investigating the influence of the ALD process (thermal vs plasma-enhanced ALD) as well as the influence of the starting surface (no clean vs partial removal of the native oxide). Ellipsometry and total X-ray reflection fluorescence were applied to study the growth of the ALD layers. Angle-resolved X-ray photoelectron spectroscopy was used to determine the composition of the interlayer. Both processes were shown to be roughly independent of the starting surface with a minor dependence for the thermal ALD. Thermally deposited ALD layers exhibited better electrical characteristics based on capacitance measurements. This could be linked to the thinner interlayer observed for thermally deposited Al2O3. However, the Fermi level was not unpinned in all cases, suggesting that more work needs to be done for passivating the interface between GaAs and the high-k layer.

引用

页码：H255 / H262

页数：8

共 30 条

[1] Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers [J].