Evolution of Raman spectra in nitrogen doped graphene

被引：250

作者：

Zafar, Zainab ^{[1
]}

Ni, Zhen Hua ^{[1
]}

Wu, Xing ^{[2
]}

Shi, Zhi Xiang ^{[1
]}

Nan, Hai Yan ^{[1
]}

Bai, Jing ^{[1
]}

Sun, Li Tao ^{[2
]}

机构：

[1] Southeast Univ, SEU Res Ctr Converging Technol, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China

[2] Southeast Univ, Sch Elect Sci & Engn, Minist Educ, Key Lab MEMS,SEU FEI Nanopico Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

CARBON | 2013年 / 61卷

关键词：

CARBON; DEFECTS; SPECTROSCOPY; DOPANTS;

D O I：

10.1016/j.carbon.2013.04.065

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present systematical Raman studies of nitrogen doped graphene (NG). Defective graphene by Ar+ ion bombardment was also studied for comparison. It was found that the defects/nitrogen dopants in NG are not homogenous. Our results also suggest that the G peak position and I-2D/I-G ratio cannot be simply used as fingerprint of doping concentration in NG. Both doping and compressive strain (as verified by transmission electron microscope) contribute to the shift of Raman peaks, while both doping and lattice defects contribute to the attenuation of 2D peak. Finally, the nature of defects in NG was probed and found that they are boundary defects. The detail analysis of the evolution of Raman spectra in NG would greatly help on the characterization and future application of this novel material. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：57 / 62

页数：6

共 41 条

[1] TABLES OF BOND LENGTHS DETERMINED BY X-RAY AND NEUTRON-DIFFRACTION .1. BOND LENGTHS IN ORGANIC-COMPOUNDS [J].

ALLEN, FH ;

KENNARD, O ;

WATSON, DG ;

BRAMMER, L ;

ORPEN, AG ;

TAYLOR, R .

JOURNAL OF THE CHEMICAL SOCIETY-PERKIN TRANSACTIONS 2, 1987, (12) :S1-S19

[2]

Balandin AA, 2011, NAT MATER, V10, P569, DOI [10.1038/nmat3064, 10.1038/NMAT3064]

[3] Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies [J].

Cancado, L. G. ;

Jorio, A. ;

Martins Ferreira, E. H. ;

Stavale, F. ;

Achete, C. A. ;

Capaz, R. B. ;

Moutinho, M. V. O. ;

Lombardo, A. ;

Kulmala, T. S. ;

Ferrari, A. C. .

NANO LETTERS, 2011, 11 (08) :3190-3196

[4] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[5] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].

Das, A. ;

Pisana, S. ;

Chakraborty, B. ;

Piscanec, S. ;

Saha, S. K. ;

Waghmare, U. V. ;

Novoselov, K. S. ;

Krishnamurthy, H. R. ;

Geim, A. K. ;

Ferrari, A. C. ;

Sood, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215

[6] Electronic and structural properties of two-dimensional carbon nitride graphenes [J].

Deifallah, Malek ;

McMillan, Paul F. ;

Cora, Furio .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (14) :5447-5453

[7] Elastic fields and moduli in defected graphene [J].

Dettori, Riccardo ;

Cadelano, Emiliano ;

Colombo, Luciano .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (10)

[8] Probing the Nature of Defects in Graphene by Raman Spectroscopy [J].

Eckmann, Axel ;

Felten, Alexandre ;

Mishchenko, Artem ;

Britnell, Liam ;

Krupke, Ralph ;

Novoselov, Kostya S. ;

Casiraghi, Cinzia .

NANO LETTERS, 2012, 12 (08) :3925-3930

[9] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[10] A simple method to synthesize continuous large area nitrogen-doped graphene [J].

Gao, Hui ;

Song, Li ;

Guo, Wenhua ;

Huang, Liang ;

Yang, Dezheng ;

Wang, Fangcong ;

Zuo, Yalu ;

Fan, Xiaolong ;

Liu, Zheng ;

Gao, Wei ;

Vajtai, Robert ;

Hackenberg, Ken ;

Ajayan, Pulickel M. .

CARBON, 2012, 50 (12) :4476-4482

← 1 2 3 4 5 →