Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

被引：5

作者：

Lehmann, J. ^{[1
]}

Leroux, C.

Charles, M.

Torres, A.

Morvan, E.

Blachier, D.

Ghibaudo, G. ^{[1
]}

Bano, E. ^{[1
]}

Reimbold, G.

机构：

[1] IMEP LAHC, F-38016 Grenoble, France

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

关键词：

AlGaN/GaN HeMT; Sheet resistance; Light; Trapping; HETEROSTRUCTURES;

D O I：

10.1016/j.mee.2013.03.161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample and it is caused by a trapping mechanism. A constant measurement of the Rsheet can be obtained under illumination. Thus, two parameters deserve measurement for an efficient screening of a technology: Rsheet under light and Delta Rsheet in obscurity. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：334 / 337

页数：4

共 6 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].