High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3 Thin Film as N-Type Layer

被引：268

作者：

Minami, Tadatsugu ^{[1
]}

Nishi, Yuki ^{[1
]}

Miyata, Toshihiro ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Optoelect Device Syst R&D Ctr, Nonoichi, Ishikawa 9218501, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 04期

关键词：

PHOTOVOLTAIC PROPERTIES; CUPROUS-OXIDE; NANOSTRUCTURES; NANOWIRE;

D O I：

10.7567/APEX.6.044101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-efficiency heterojunction solar cells consisting of a nondoped Ga2O3 thin film as an n-type semiconductor layer and a p-type Cu2O sheet as the active layer as well as the substrate, prepared by thermally oxidizing a Cu sheet, are demonstrated. The use of an n-type Ga2O3 thin film can greatly improve the performance of n-Ga2O3/p-Cu2O heterojunction solar cells. The highest efficiency of 5.38% was obtained in an Al-doped ZnO/Ga2O3/Cu2O heterojunction solar cell fabricated with an n-Ga2O3 thin-film layer prepared at room temperature with a thickness of 75 nm by a pulsed laser deposition method. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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