Elongated shaped Si island formation on 3C-SiC by chemical vapor deposition and its application to antiphase domain observation

被引：14

作者：

Ishida, Y

Takahashi, T

Okumura, H

Sekigawa, T

Yoshida, S

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Saitama Univ, Fac Engn, Dept Elect & Syst Engn, Urawa, Saitama 338870, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 6A期

关键词：

3C-SiC; heteroepitaxial growth; elongated Si island; APD; anisotropic diffusion;

D O I：

10.1143/JJAP.38.3470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the early stage of Si growth on 3C-SiC. We found that adsorbed Si atoms on a 3C-SiC surface form elongated islands 2-3 mu m long and parallel to the [110] direction. The formation of anisotropic islands can be explained by the anisotropic diffusion constant of Si adatoms on a 3C-SiC surface. We proposed a novel, method to observe antiphase domains (APDs) using this characteristic of Si island growth on 3C-SiC.

引用

页码：3470 / 3474

页数：5