Texture control and ferroelectric properties of Pb(Nb,Zr,Sn,Ti)O3 thin films prepared by chemical solution method

被引：10

作者：

Qu, WG ^{[1
]}

Tan, XL ^{[1
]}

机构：

[1] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA

来源：

THIN SOLID FILMS | 2006年 / 496卷 / 02期

关键词：

antiferroelectric thin films; texture control; ferroelectric properties; chemical solution deposition;

D O I：

10.1016/j.tsf.2005.09.094

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A chelating and spin-coating procedure was used to prepare antiferroelectric thin films of Pb0.99Nb0.02[(Zr0.84Sn0.16)(0.982)Ti-0.018](0.98)O-3. By controlling substrate and thermal processing conditions, films with strong (100) and (I 11) textures, as well as without textures, were prepared. These anti ferroelectric films showed the characteristic double hysteresis polarization vs. electric field loops. An orientation dependence of the critical field for the anti ferroelectric-to-ferroelectric phase transition was also observed. In addition, when the applied voltage exceeded a critical level during the first "ramp up," an abnormal reduction in the area of the hysteresis loop was noticed in the (100) and (I 11) textured films. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：383 / 388

页数：6

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