High-Q photonic crystal microcavities fabricated in a thin GaAs membrane

被引：32

作者：

Reese, C ^{[1
]}

Gayral, B

Gerardot, BD

Imamoglu, A

Petroff, PM

Hu, E

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat Sci, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期

关键词：

D O I：

10.1116/1.1412893

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of photonic crystal microcavities in GaAs having H I and H2 defects for lattice constants as small as 255 nm. In H2 microcavities, we observed resonances with Q factors as high as 4000. The degeneracy of these high-Q modes is lifted by the imperfect nature of the fabrication process. (C) 2001 American Vacuum Society.

引用

页码：2749 / 2752

页数：4

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