Controlled synthesis of NiS nanoparticle/CdS nanowire heterostructures via solution route and their optical properties

被引:26
|
作者
Yan, Shancheng [1 ,2 ]
Shi, Yi [2 ]
Sun, Litao [3 ]
Xiao, Zhongdang [4 ]
Sun, Bo [4 ]
Xu, Xin [1 ]
机构
[1] Nanjing Univ Posts & Telecommun, Sch Geog & Biol Informat, Nanjing 210046, Jiangsu, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 210096, Jiangsu, Peoples R China
[4] Southeast Univ, Sch Biol Sci & Med Engn, State Key Lab Bioelect, Chien Shiung Wu Lab, Nanjing 210096, Jiangsu, Peoples R China
基金
中国博士后科学基金;
关键词
Chemical synthesis; Crystal growth; Nanostructures; Semiconductors; CDS NANOWIRE; GROWTH; OXIDE; SHAPE;
D O I
10.1016/j.mseb.2012.10.026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present study, we have successfully synthesized the novel heterostructure of NiS nanoparticle (NP)/CdS nanowire (NW) through solution approach. The first step, CdS nanowires were synthesized by a convenient solvothermal route. Then, NiS nanoparticles were grown on the surface of CdS nanowires in a chemical solution of NiCl2 center dot 6H(2)O and anhydrous ethanol at 200 degrees C. The new catalyst-assisted growth mechanism of the NiS NP/CdS NW heterostructure has been tentatively discussed on the basis of experimental results. A detailed study of the effect of experimental parameters, such as reaction time, reaction temperature, and reaction solvent are also studied. The as-prepared products are characterized by field-emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), and their optical properties are measured by Raman spectra and PL spectra. Furthermore, using CdS nanowires and NiS NP/CdS NW heterostructure as examples, our study suggests that this general method can be employed for construction of other semiconductor heterostructures with novel properties. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:109 / 116
页数:8
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