Fabrication and Characterization of Cd0.9Zn0.1Te Schottky Diodes for High Resolution Nuclear Radiation Detectors

被引：39

作者：

Mandal, Krishna C. ^{[1
]}

Krishna, Ramesh M. ^{[1
]}

Muzykov, Peter G. ^{[1
]}

Hayes, Timothy C. ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 04期

关键词：

CZT; defects; detectors; CDTE CRYSTALS; GROWTH; DEFECTS;

D O I：

10.1109/TNS.2012.2202324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cadmium zinc telluride (CZT) Schottky diodes with very low reverse leakage current have been fabricated and characterized for high resolution gamma ray detectors. The diodes were made using Cd0.9Zn0.1Te detector grade crystals grown from zone refined Cd, Zn, and Te (7N) precursor materials using low temperature tellurium solvent method. Various crystallographic defects including Te-inclusions/precipitates were identified and characterized using electron beam induced current (EBIC) measurement and thermally stimulated current (TSC) spectroscopy. The EBIC images were correlated with transmission infrared (TIR) images of CZT crystals and the EBIC contrast was attributed to the nonuniformities in spatial distribution of Te inclusions. Characterization by TSC revealed shallow and deep level centers with activation energies 0.25-0.4 eV and 0.65-0.8 eV respectively, which were attributed to intrinsic defects associated with Te inclusions. Pulse height measurements were carried out using Cs-137 (662 keV) radiation source and energy resolution of similar to 1.51% full width at half maximum (FWHM) was obtained from the as-grown boule.

引用

页码：1504 / 1509

页数：6

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