Significant Enhancement in the Thermoelectric Performance of a Bismuth Telluride Nanocompound through Brief Fabrication Procedures

被引:26
作者
Kim, Cham [1 ,2 ]
Kim, Dong Hwan [1 ]
Kim, Hoyoung [1 ]
Chung, Jong Shik [2 ]
机构
[1] Daegu Gyeongbuk Inst Sci & Technol DGIST, Dalseong Gun 711873, Daegu, South Korea
[2] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 790784, South Korea
关键词
thermoelectric materials; ZT; chemical synthesis; nanostructures; bismuth telluride; PHONON-GLASS; THERMAL-PROPERTIES; BI2TE3; FIGURE;
D O I
10.1021/am3002764
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A binary BiTe nanocompound for thermoelectric applications was prepared via a water-based chemical reaction under atmospheric conditions. We attempted to increase the carrier mobility of the nanocompound by adopting a post-thermal treatment consisting of calcination and reduction at different temperatures. We also tried to control the carrier density of the compound by adjusting the stoichiometry of the atomic constituents. We measured other transport properties (i.e., electrical resistivity, Seebeck coefficient, and thermal conductivity) and observed how these properties were affected by both the carrier mobility and the carrier density. We derived the thermoelectric performance, as captured by the figure of merit (ZT), from the transport properties and discussed the effect of such properties on the ZT value. The nanocompound exhibited a very competent ZT value (0.91 at 100 degrees C), which is one of the best thermoelectric performances of chemically synthesized BiTe materials.
引用
收藏
页码:2949 / 2954
页数:6
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