A transient electron transport analysis of bulk wurtzite zinc oxide

被引：15
作者：
Hadi, Walid A. [2 ]
Shur, Michael S. [3 ]
O'Leary, Stephen K. [1 ]
机构：
[1] Univ British Columbia, Sch Engn, Kelowna, BC V1V 1V7, Canada
[2] Univ Windsor, Dept Elect & Comp Engn, Windsor, ON N9B 3P4, Canada
[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 03期
基金：
加拿大自然科学与工程研究理事会; 美国国家科学基金会;
关键词：
BAND MONTE-CARLO; V NITRIDE SEMICONDUCTORS; HIGH-FIELD TRANSPORT; STEADY-STATE; ZNO FILMS; GAN; SURFACE; SENSITIVITY; SIMULATION; CRYSTALS;
D O I：
10.1063/1.4745027
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A three-valley Monte Carlo simulation approach is used in order to probe the transient electron transport that occurs within bulk wurtzite zinc oxide. For the purposes of this analysis, we follow O'Leary et al. [Solid State Commun. 150, 2182 (2010)], and study how electrons, initially in thermal equilibrium, respond to the sudden application of a constant applied electric field. We find that for applied electric field strength selections in excess of 300 kV/cm that an overshoot in the electron drift velocity is observed. An undershoot in the electron drift velocity is also observed for applied electric field strength selections in excess of 700 kV/cm, this velocity undershoot not being observed for other compound semiconductors, such as gallium arsenide and gallium nitride. We employ a means of rendering transparent the electron drift velocity enhancement offered by the transient electron transport, and then use the calculated dependence of the peak transient electron drift velocity on the applied electric field for the design optimization of short-channel high-frequency electron devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745027]
引用
收藏
页数：5
相关论文
共 40 条
[21]   BAND-GAPS, CRYSTAL-FIELD SPLITTING, SPIN-ORBIT-COUPLING, AND EXCITON BINDING-ENERGIES IN ZNO UNDER HYDROSTATIC-PRESSURE [J].
MANG, A ;
REIMANN, K ;
RUBENACKE, S .
SOLID STATE COMMUNICATIONS, 1995, 94 (04) :251-254
[22]   PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].
MARUSKA, HP ;
TIETJEN, JJ .
APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&
[23]   Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis [J].
O'Leary, SK ;
Foutz, BE ;
Shur, MS ;
Eastman, LF .
APPLIED PHYSICS LETTERS, 2005, 87 (22) :1-3
[24]   Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review [J].
O'Leary, SK ;
Foutz, BE ;
Shur, MS ;
Eastman, LF .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2006, 17 (02) :87-126
[25]   Monte Carlo simulation of electron transport in wurtzite aluminum nitride [J].
O'Leary, SK ;
Foutz, BE ;
Shur, MS ;
Bhapkar, UV ;
Eastman, LF .
SOLID STATE COMMUNICATIONS, 1998, 105 (10) :621-626
[26]   Electron transport in wurtzite indium nitride [J].
O'Leary, SK ;
Foutz, BE ;
Shur, MS ;
Bhapkar, UV ;
Eastman, LF .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :826-829
[27]   Steady-state electron transport in the III-V nitride semiconductors: A sensitivity analysis [J].
O'Leary, SK ;
Foutz, BE ;
Shur, MS ;
Eastman, LF .
JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) :327-334
[28]   Potential performance of indium-nitride-based devices [J].
O'Leary, SK ;
Foutz, BE ;
Shur, MS ;
Eastman, LF .
APPLIED PHYSICS LETTERS, 2006, 88 (15)
[29]   Polar optical phonon instability and intervalley transfer in III-V semiconductors [J].
O'Leary, SK ;
Foutz, BE ;
Shur, MS ;
Eastman, LF .
SOLID STATE COMMUNICATIONS, 2001, 118 (02) :79-83
[30]   Steady-state and transient electron transport within bulk wurtzite zinc oxide [J].
O'Leary, Stephen K. ;
Foutz, Brian E. ;
Shur, Michael S. ;
Eastman, Lester F. .
SOLID STATE COMMUNICATIONS, 2010, 150 (43-44) :2182-2185
1234