Extended x-ray absorption fine structure measurements on asymmetric bipolar pulse direct current magnetron sputtered Ta2O5 thin films

被引:18
|
作者
Haque, S. Maidul [1 ]
Sagdeo, Pankaj R. [2 ,3 ]
Shinde, D. D. [1 ]
Misal, J. S. [1 ]
Jha, S. N. [4 ]
Bhattacharyya, D. [4 ]
Sahoo, N. K. [4 ]
机构
[1] Bhabha Atom Res Ctr, Atom & Mol Phys Div, VIZAG Ctr, Visakhapatnam 530012, Andhra Pradesh, India
[2] Indian Inst Technol Indore, Discipline Phys, Indore 452017, Madhya Pradesh, India
[3] Indian Inst Technol Indore, Ctr Mat Sci & Engn, Indore 452017, Madhya Pradesh, India
[4] Bhabha Atom Res Ctr, Atom & Mol Phys Div, Bombay 400094, Maharashtra, India
关键词
OPTICAL-PROPERTIES; TEMPERATURE;
D O I
10.1364/AO.54.006744
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Tantalum pentoxide (Ta2O5) thin films have been deposited on fused silica substrates using a novel asymmetric bipolar DC magnetron sputtering technique under a mixed ambient of oxygen and argon. Films have been prepared at different oxygen-to-argon ratios, and the sputtering ambient and optical properties of the films have been investigated by spectroscopic ellipsometry, while the structural analysis of the films has been carried out by grazing incidence x-ray diffraction and extended x-ray absorption fine structure (EXAFS) measurements. The concentration of oxygen and tantalum in the Ta2O5 films has been estimated by Rutherford backscattering spectrometry (RBS). The variation of the optical constants of the films with changes in deposition parameters has been explained in the light of the change in average Ta-O bond lengths and oxygen coordination around Ta sites as obtained from EXAFS measurements. The trend in variation of the oxygen-to-tantalum ratio in the films obtained from RBS measurement, as a function of oxygen partial pressure used during sputtering, is found to follow the trend in variation of the oxygen coordination number around Ta sites obtained from EXAFS measurement. (C) 2015 Optical Society of America
引用
收藏
页码:6744 / 6751
页数:8
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