Temperature and distance dependence of plasmon enhanced InAs/InGaAs/GaAs dot-in-a-well near IR emission

被引：0
|
作者：
Haq, Sharmin [1 ,4 ]
Addamane, Sadhvikas [2 ,4 ]
Balakrishnan, Ganesh [1 ,2 ,4 ]
Huang, Danhong [5 ]
Habteyes, Terefe G. [1 ,3 ,4 ]
机构：
[1] Univ New Mexico, Opt Sci & Engn Program, Albuquerque, NM 87131 USA
[2] Univ New Mexico, Elect & Comp Engn, Albuquerque, NM 87131 USA
[3] Univ New Mexico, Dept Chem & Chem Biol, Albuquerque, NM 87131 USA
[4] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87131 USA
[5] US Air Force, Res Lab, Space Vehicles Directorate, Kirtland AFB, NM 87117 USA
来源：
2017 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN) | 2017年
关键词：
plasmon; near IR; quantum dots; near-field effects;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using gold nanorods (AuNRs) as plasmonic structures to couple the InAs QD emitter for enhancing carrier generation and photon emission, temperature dependent PL emission over a range of 10K to room temperature has been studied systematically by varying the GaAs thickness.
引用
收藏
页码：85 / 86
页数：2
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