Voltage-dependent Mobility Characterization of MDMO-PPV Thin-Film Transistors for Flexible Sensor Applications

被引：5

作者：

Cavallari, M. R. ^{[1
]}

Albertin, K. F. ^{[1
]}

Santos, G. ^{[1
]}

Ramos, C. A. S. ^{[1
]}

Pereyra, I. ^{[1
]}

Fonseca, F. J. ^{[1
]}

Andrade, A. M. ^{[2
]}

机构：

[1] Escola Politecn Univ Sao Paulo, Dept Engn Sistemas Eletron, Av Prof Luciano Gualberto,158 Trav 3, BR-05508970 Sao Paulo, Brazil

[2] Univ Sao Paulo, Inst Eletrot Energia, BR-1289 Sao Paulo, SP, Brazil

来源：

MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2010 | 2010年 / 31卷 / 01期

基金：

巴西圣保罗研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; BIOLOGICAL SENSORS; CHARGE-TRANSPORT;

D O I：

10.1149/1.3474188

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We complement our previous published results on MDMO-PPV thin-film transistors by treating data according to different models that consider charge transport by hopping. Devices were processed on highly-doped silicon and ITO-covered glass substrates with dielectrics such as thermal SiO2 and PECVD deposited SiOxNy. Charge carrier mobility and threshold voltage on polymeric thin-film transistors can be better estimated considering transport dependence on carrier density, Poole-Frenkel effect and interface states. Best results were achieved on HMDS-treated SiO2, but a completely new voltage-dependence is attained. These models can be employed for a better understanding of the polymeric semiconductor behavior when in a TFT-based sensor.

引用

页码：425 / 432

页数：8

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