Investigation of CH4, NH3, H2 and He plasma treatment on porous low-k films and its effects on resisting moisture absorption and ions penetratiorl

被引：3

作者：

Lu, Hai-Sheng ^{[1
]}

Gottfried, Knut ^{[2
,3
]}

Ahner, Nicole ^{[2
,3
]}

Schulz, Stefan ^{[2
,3
]}

Qu, Xin-Ping ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Dept Microelect, Shanghai 200433, Peoples R China

[2] TU Chemnitz ZfM, D-09126 Chemnitz, Germany

[3] Fraunhofer ENAS, D-09126 Chemnitz, Germany

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 106卷

关键词：

Porous low-k; Plasma treatment; Moisture uptake inhibition; SIOCH; DIFFUSION; DAMAGE; LAYER; GLASS;

D O I：

10.1016/j.mee.2012.12.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the influence of CH4, NH3, H-2 and He plasma on properties of porous low-k film and its effects on resisting moisture absorption during CMP and ions penetration from sputtering. It is found that the H2, He, NH3 plasma can cause aggressive carbon depletion in the porous low-k films and change the low-k surface from hydrophobic to hydrophilic, which will induce moisture uptake into the low-k material during the CMP process, and result in increase of the k value and leakage current density. The CH4 plasma can make low-k material more resist against moisture uptake and keep the k value stable and a good electrical property of the low-k films. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.

引用

页码：85 / 90

页数：6

共 19 条

[1] Aimadeddine M, 2006, IEEE INT INTERC TECH, P81
[2] He plasma pretreatment effects on oxygen plasma-induced carbon loss and surface roughening in an ultralow-k organosilicate glass film
Behera, Swayambhu P.
Wang, Qing
Kelber, Jeffry A.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (15)
[3] Pore sealing of mesoporous silica low-k dielectrics by oxygen and argon plasma treatments
Chang, Chih-Chieh
Pan, Fu-Ming
Chen, Ching-Wen
[J]. MICROELECTRONIC ENGINEERING, 2009, 86 (11) : 2241 - 2246
[4] Moisture-induced material instability of porous organosilicate glass
Chang, TC
Chen, CW
Liu, PT
Mor, YS
Tsai, HM
Tsai, TM
Yan, ST
Tu, CH
Tseng, TY
Sze, SM
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (04) : F13 - F15
[5] Effect of plasma process on low-k material and barrier layer performance
Chen, XT
Gui, D
Mo, ZQ
Du, AY
Chi, DZ
Wang, WD
Wang, YH
Lu, D
Tang, LJ
Li, WH
Wong, LY
[J]. THIN SOLID FILMS, 2006, 504 (1-2) : 248 - 251
[6] Dual hard mask process for low-k porous organosilica dielectric in copper dual damascene interconnect fabrication
Hiroi, M
Tada, M
Ohtake, H
Saito, S
Onodera, T
Furutake, N
Harada, Y
Hayashi, Y
[J]. PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, : 295 - 297
[7] The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application
Huang, C. H.
Wang, N. F.
Tsai, Y. Z.
Liu, C. C.
Hung, C. I.
Houng, M. P.
[J]. MATERIALS CHEMISTRY AND PHYSICS, 2008, 110 (2-3) : 299 - 302
[8] Surfactant Mobility in Nanoporous Glass Films
Kim, Taek-Soo
Mackie, Katherine
Zhong, Qiping
Peterson, Maria
Konno, Tomohisa
Dauskardt, Reinhold H.
[J]. NANO LETTERS, 2009, 9 (06) : 2427 - 2432
[9] Moisture influence on porous low-k reliability
Michelon, Julien
Hoofman, Romano J. O. M.
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (02) : 169 - 174
[10] Deposition of DLC films in CH4/Ne and CH4/Kr rf plasmas
Mutsukura, N
Yoshida, K
[J]. DIAMOND AND RELATED MATERIALS, 1997, 6 (5-7) : 547 - 550

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