InAs/InAlGaAs Quantum Dot-on-Silicon Microdisk Lasers Operating at 1.55 μm

被引：0
|
作者：
Shi, Bei [1 ]
Zhu, Si [1 ]
Li, Qiang [1 ]
Wan, Yating [1 ]
Hu, Evelyn L. [2 ]
Lau, Kei May [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[2] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 mu W and quality factor of 2200.
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