Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness

被引：30
作者：
Lei, W [1 ]
Chen, YH [1 ]
Wang, YL [1 ]
Huang, XQ [1 ]
Zhao, C [1 ]
Liu, JQ [1 ]
Xu, B [1 ]
Jin, P [1 ]
Zeng, YP [1 ]
Wang, ZG [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 286卷 / 01期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
defects; lateral composition modulation; photoluminescence; molecular beam epitaxy; quantum wires; semiconductor III-V material;
D O I：
10.1016/j.jcrysgro.2005.09.054
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires (QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases with increasing InAs deposited thickness due to the different thicknesses of the QWRs and defects in the samples. The defects and lateral composition modulation of the InAlAs layers play an important role in the temperature-dependent PL properties of the samples. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：23 / 27
页数：5
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