Ion implantation with scanning probe alignment

被引：14

作者：

Persaud, A ^{[1
]}

Liddle, JA

Schenkel, T

Bokor, J

Ivanov, T

Rangelow, IW

机构：

[1] EO Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[3] Univ Kassel, Inst Microstruct Technol & Analyt, D-3500 Kassel, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 06期

关键词：

D O I：

10.1116/1.2062628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a scanning probe instrument which integrates ion beams with the imaging and alignment function of a piezoresistive scanning probe in high Vacuum. The beam passes through several apertures and is finally collimated by a hole in the cantilever of the scanning probe. The ion beam spot size is limited by the size of the last aperture. Highly charged ions are used to show hits of single ions in resist, and we discuss the issues for implantation of single ions. (c) 2005 American Vacuum Society.

引用

页码：2798 / 2800

页数：3

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