Structural properties of GaAs nanostructures formed by a supply of intense As4 flux in droplet epitaxy

被引：20

作者：

Mano, T. ^{[1
]}

Mitsuishi, K. ^{[1
]}

Nakayama, Y. ^{[2
]}

Noda, T. ^{[1
]}

Sakoda, K. ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050047, Japan

[2] Natl Inst Mat Sci, High Voltage Elect Microscopy Stn, Tsukuba, Ibaraki 3050003, Japan

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 23期

关键词：

droplet epitaxy; GaAs; molecular beam epitaxy; quantum dot; whisker;

D O I：

10.1016/j.apsusc.2008.02.025

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated detailed structural properties of GaAs nanostructures formed by a supply of intense As-4 flux to Ga droplets. Scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) revealed that whisker-like nanostructures had formed on the truncated cone-shaped bases after crystallization. Moreover, electron energy loss spectroscopy in scanning transmission electron microscopy (STEM-EELS) revealed that elemental Ga atoms remained inside the nanostructures while outside, some had crystallized into GaAs. These findings suggest that crystallization started at the edges of the droplets and the GaAs grew upward along the periphery of the droplets until the droplets were completely covered with crystallized GaAs. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：7770 / 7773

页数：4

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