A CMOS multi-band low noise amplifier using high-Q active inductors

被引：0

作者：

Yang, Jenn-Tzer ^{[1
]}

Lee, Yuan-Hao ^{[1
]}

Wu, Ming-Jeui ^{[1
]}

Huang, Yi-Yuan ^{[1
]}

Mu, Yu-Min ^{[1
]}

机构：

[1] Ming Hsin Univ Sci & Technol, Dept Elect Engn, 1 Hsin Hsing Rd, Hsinchu 304, Taiwan

来源：

MUSP '08: MULTIMEDIA SYSTEMS AND SIGNAL PROCESSING | 2008年

关键词：

CMOS; high-Q active inductor; low noise amplifier; multiple band; multi-standards;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a CMOS Multi-band LNA using High-Q active inductors load with a binary code band selector suitable for multi-standards wireless applications is proposed. Using an improved high-Q active inductor including two bits binary controlled code, the multi-band low noise amplifier operating at four different frequency bands is realized. The proposed amplifier is designed in TSMC 0.18-um CMOS technology. Based on the simulation results, the amplifier can operate at 900MHz, 1.8GHz, 1.9GHz, and 2.4GHz with forward gain (S-21) Of 40.7dB, 35.9dB, 37.2dB, and 30.7dB, and the noise figure (NF) of 0.018dB, 0.006dB, 0.001dB, and 0.01dB, respectively. Furthermore, the power dissipation of this amplifier can retain constant at all operating frequency bands and consume around 10.53 mW from 1.8-V power supply.

引用

页码：46 / +

页数：2

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