Fluorine in Ge: Segregation and EOR-defects stabilization

被引：14
作者：
Boninelli, S. [1 ,2 ]
Impellizzeri, G. [1 ,2 ]
Priolo, F. [1 ,2 ]
Napolitani, E. [3 ,4 ]
Spinella, C. [5 ]
机构：
[1] Univ Catania, MATIS IMM CNR, I-95123 Catania, Italy
[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[3] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
[4] Univ Padua, MATIS IMM CNR, I-35131 Padua, Italy
[5] IMM CNR, I-95121 Catania, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 282卷
关键词：
Germanium; Defects; Impurities; Segregation; PREAMORPHIZED SI; DIFFUSION; GERMANIUM;
D O I：
10.1016/j.nimb.2011.08.039
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this paper we investigate the F behavior in Ge during solid phase epitaxy (SPE) and post-SPE annealing. Fluorine implanted with a fluence of 1 x 10(15) F/cm(2) and an energy of 35 key induced the formation of an amorphous Ge layer. Detailed chemical and structural characterizations of the as implanted and annealed samples evidenced a strong segregation of F at the moving amorphous/crystalline interface, leading to a remarkable SPE rate retardation. In addition, we observed that F accumulates in correspondence of the end of range (EOR) defects. The comparison between the thermal evolution of damage produced by self-implantation and F implantation in Ge suggests that F increases significantly the stability of EOR. Such behavior clarifies the role of F in modifying the As diffusion in Ge recently reported in literature. (C) 2011 Elsevier B.V. All rights reserved.
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收藏
页码：21 / 24
页数：4
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