Electronic properties of T graphene-like C-BN sheets: A density functional theory study

被引：32

作者：

Majidi, R. ^{[1
]}

机构：

[1] Shahid Rajaee Teacher Training Univ, Dept Phys, Tehran 1678815811, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2015年 / 74卷

关键词：

T graphene-like sheet; Planar T graphene; Electronic property; Density functional theory; BORON-NITRIDE; BANDGAP; LAYERS;

D O I：

10.1016/j.physe.2015.07.029

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have used density functional theory to study the electronic properties of T graphene-like C, C-BN and BN sheets. The planar T graphene with metallic property has been considered. The results show that the presence of BN has a considerable effect on the electronic properties of T graphene. The T graphene-like C-BN and BN sheets show semiconducting properties. The energy band gap is increased by enhancing the number of BN units. The possibility of opening and controlling band gap opens the door for T graphene in switchable electronic devices. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：371 / 376

页数：6

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