Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

被引：29
作者：
Kumar, Ashok [1 ]
Ahluwalia, P. K. [1 ]
机构：
[1] Himachal Pradesh Univ, Dept Phys, Shimla 171005, Himachal Prades, India
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 587卷
关键词：
Transition metal compounds; Electronic band structure; Electronic transport; Dielectric response; Electron energy loss spectra; MAGNETIC-PROPERTIES; MX2 M=MO; MOS2; SE; NANORIBBONS; MONOLAYER; TE; BILAYER; X=S;
D O I：
10.1016/j.jallcom.2013.10.129
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX2 (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G(0) conductance for the ribbons of MoS2 and WS2; 2G(0) conductance for MoS2, WS2, WSe2 wires, and ribbons of MoTe2 and WTe2; and 3G(0) conductance for WSe2 ribbon. The studied configurations show non-linear current-voltage (I-V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：459 / 467
页数：9
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