Roughening Conjugated Polymer Surface for Enhancing the Charge Collection Efficiency of Sequentially Deposited Polymer/Fullerene Photovoltaics

被引:11
作者
Jang, Yoonhee [1 ]
Seo, Ji-Won [2 ]
Seok, Jeesoo [1 ]
Lee, Jung-Yong [2 ]
Kim, Kyungkon [1 ]
机构
[1] Ewha Womans Univ, Dept Chem & Nano Sci, Seoul 127750, South Korea
[2] Korea Adv Inst Sci & Technol, Grad Sch Energy Environm Water & Sustainabil EEWS, Graphene Res Ctr, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
organic photovoltaics; bilayer organic photovoltaics; sequential deposition; ordering agent; HETEROJUNCTION SOLAR-CELLS; BULK-HETEROJUNCTION; MOLECULAR DESIGN; PERFORMANCE; DEVICE; FILMS;
D O I
10.3390/polym7081466
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A method that enables the formation of a rough nano-scale surface for conjugated polymers is developed through the utilization of a polymer chain ordering agent (OA). 1-Chloronaphthalene (1-CN) is used as the OA for the poly(3-hexylthiophene-2,5-diyl) (P3HT) layer. The addition of 1-CN to the P3HT solution improves the chain ordering of the P3HT during the film formation process and increases the surface roughness of the P3HT film compared to the film prepared without 1-CN. The roughened surface of the P3HT film is utilized to construct a P3HT/fullerene bilayer organic photovoltaic (OPV) by sequential solution deposition (SqSD) without thermal annealing process. The power conversion efficiency (PCE) of the SqSD-processed OPV utilizing roughened P3HT layer is 25% higher than that utilizing a plain P3HT layer. It is revealed that the roughened surface of the P3HT increases the heterojunction area at the P3HT/fullerene interface and this resulted in improved internal charge collection efficiency, as well as light absorption efficiency. This method proposes a novel way to improve the PCE of the SqSD-processed OPV, which can be applied for OPV utilizing low band gap polymers. In addition, this method allows for the reassessment of polymers, which have shown insufficient performance in the BSD process.
引用
收藏
页码:1497 / 1509
页数:13
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