Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications

被引：70

作者：

Chen, Xinman ^{[1
]}

Wu, Guangheng ^{[1
]}

Jiang, Peng ^{[1
]}

Liu, Weifang ^{[1
]}

Bao, Dinghua ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 03期

关键词：

colossal magnetoresistance; crystal orientation; magnesium compounds; magnetic switching; magnetic thin films; MIM structures; platinum; PHASE; FILMS;

D O I：

10.1063/1.3073858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We reported the discovery of colossal resistance switching effect in polycrystalline spinel-like structure MgZnO thin films with high Mg contents sandwiched by Pt electrodes. The ultrahigh resistance ratio of high resistance state to low resistance state of about seven to nine orders of magnitude with a low reset voltage of less than 1 V was obtained in this thin film system. The resistance ratio shows an increase of several orders of magnitude compared with those of previously reported resistance switching material systems including metal oxides, semiconductors, and organic molecules. This colossal resistance switching effect will greatly improve the signal-to-noise ratio and simplify the process of reading memory state for nonvolatile memory applications. Our study also provides a material base for studying the origin of resistance switching phenomenon.

引用

页数：3

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