Infrared signals correlated with self-interstitial clusters in neutron-irradiated silicon

被引:5
作者
Londos, C. A. [1 ]
Antonaras, G. [1 ]
Chroneos, A. [2 ,3 ]
机构
[1] Univ Athens, Dept Phys, Solid State Sect, Zografos 15784, Greece
[2] Open Univ, Milton Keynes MK7 6AA, Bucks, England
[3] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
关键词
ION-IMPLANTED SILICON; CARBON; DEFECTS; ALLENE; GERMANIUM; SI; IMPURITY; IMPACT; STATE;
D O I
10.1007/s10854-013-1406-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using infrared spectroscopy we have investigated the defect spectrum of neutron-irradiated Czochralski-silicon (Cz-Si). The study was focused on three weak signals, mainly on a band at 533 cm(-1), as well as on two other bands at 582 and 592 cm(-1). The band at 533 cm(-1) disappears from the spectra at 170 A degrees C exhibiting similar thermal stability with the Si-P-6 electron paramagnetic resonance spectrum, previously correlated with a di-interstitial defect. The suggested model for the latter defect, comprising two self-interstitials placed symmetrically a lattice site Si atom, is very similar with that of the allene molecule. This allowed the calculation of the vibrational frequency of the suggested di-interstitial structure giving a value close to the 533 cm(-1), in further support of the above assignment. The band at 582 cm(-1) is stable up to 550 A degrees C. The possible correlation of its origin to large self-interstitial clusters is examined. Also, the origin of the 592 cm(-1) band, which is stable up to 200 A degrees C is discussed, with indications tentatively pointing to a CV pair.
引用
收藏
页码:4328 / 4331
页数:4
相关论文
共 41 条
[1]   Equilibrium structure and fundamental frequencies of allene [J].
Auer, AA ;
Gauss, J .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2001, 3 (15) :3001-3005
[2]   ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J].
BEAN, AR ;
NEWMAN, RC ;
SMITH, RS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) :739-&
[3]   MOTIONS OF MOLECULES IN CONDENSED SYSTEMS .12. INFRARED SPECTRUM AND STRUCTURE OF A SINGLE CRYSTAL OF ALLENE [J].
BLANC, J ;
HALFORD, RS ;
BRECHER, C .
JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (10) :2654-&
[4]   Isovalent impurity-vacancy complexes in germanium [J].
Chroneos, A. .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09) :3206-3210
[5]   Impact of the germanium concentration in the stability of E-centers and A-centers in Si1-xGex [J].
Chroneos, A. ;
Sgourou, E. N. ;
Londos, C. A. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (08) :2772-2776
[6]   Point defect engineering strategies to suppress A-center formation in silicon [J].
Chroneos, A. ;
Londos, C. A. ;
Sgourou, E. N. ;
Pochet, P. .
APPLIED PHYSICS LETTERS, 2011, 99 (24)
[7]   Interaction of A-centers with isovalent impurities in silicon [J].
Chroneos, A. ;
Londos, C. A. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)
[8]   Dopant-vacancy cluster formation in germanium [J].
Chroneos, A. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
[9]   Carbon, dopant, and vacancy interactions in germanium [J].
Chroneos, A. ;
Uberuaga, B. P. ;
Grimes, R. W. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
[10]   Phosphorous clustering in germanium-rich silicon germanium [J].
Chroneos, A. ;
Bracht, H. ;
Grimes, R. W. ;
Uberuaga, B. R. .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 :72-75