Amorphous thin films based on paraffin doped chalcogenides, prepared by pulsed laser deposition

被引：0

作者：

Popescu, M

Sava, F

Lörinczi, A

Mihailescu, IN

Socol, G

Axente, E

Kaban, I

Hoyer, W

机构：

[1] Natl Inst Mat Phys, Bucharest, Romania

[2] Natl Inst Lasers Plasma & Radiat Phys, Bucharest, Romania

[3] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2004年 / 6卷 / 01期

关键词：

paraffin doped chalcogenide; selenium-sulfur; thin film; pulsed laser; deposition;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A chalcogenide material of composition Se42S58, doped by 10 wt.% paraffins has been prepared as thin films by pulsed laser deposition. The structural properties of the films have been investigated by X-ray diffraction. Sample stabilization was carried out by annealing at temperatures around 100degreesC.

引用

页码：163 / 167

页数：5

共 20 条

[1]

[Anonymous], 2000, NONCRYSTALLINE CHALC, DOI DOI 10.1007/0-306-47129-9

[2]

Arsh A, 2002, J OPTOELECTRON ADV M, V4, P27

[3]

CHEUNG JT, 1984, MATER RES SOC S P, V29, P301

[4]

Ivan I, 2002, J OPTOELECTRON ADV M, V4, P743

[5]

Jain H, 2003, J OPTOELECTRON ADV M, V5, P5

[6] PREPARATION, STRUCTURE AND OPTICAL-PROPERTIES OF GLASSES IN THE SYSTEMS SELENIUM-SULFUR AND TELLURIUM-SULFUR [J].

JECU, D ;

JAKLOVSZKY, J ;

TRUTIA, A ;

APOSTOL, I ;

DINESCU, M ;

MIHAILESCU, IN ;

ALDICA, G ;

POPESCU, M ;

VLAHOVICI, N ;

ZAMFIRA, S ;

INDREA, E .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) :319-322

[7]

Kikineshi A, 2001, J OPTOELECTRON ADV M, V3, P377

[8]

Kovalskiy A, 2001, J OPTOELECTRON ADV M, V3, P323

[9]

Lörinczi A, 2003, J OPTOELECTRON ADV M, V5, P1081

[10]

Lyubin V, 2001, J OPTOELECTRON ADV M, V3, P265

← 1 2 →