Breakdown Voltage In Silicon Carbide Metal-Oxide-Semiconductor Devices Induced By Ion Beams

被引：0

作者：

Ohshima, T. ^{[1
]}

Deki, M. ^{[1
,2
]}

Makino, T. ^{[1
]}

Iwamoto, N. ^{[1
]}

Onoda, S. ^{[1
]}

Hirao, T. ^{[1
]}

Kojima, K. ^{[3
]}

Tomita, T. ^{[2
]}

Matsuo, S. ^{[2
]}

Hashimoto, S. ^{[2
]}

机构：

[1] JAEA, 1233 Watanuki, Takasaki, Gunma 3701292, Japan

[2] Univ Tokushima, Tokushima 7708506, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY | 2013年 / 1525卷

关键词：

Silicon Carbide (SiC); Metal-Oxide-Semiconductor (MOS); Heavy Ions; Single Event Gate Rupture; RAY INDUCED FAILURES; CHARGE COLLECTION;

D O I：

10.1063/1.4802408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H silicon carbide (SiC) were irradiated with heavy ions at energies of up to 454 MeV. The currents observed through the gate oxide of the MOS capacitors were monitored under biased conditions during ion irradiation. Under ion irradiation, the dielectric breakdown was observed at lower electric fields compared to the case under non-irradiation condition. The value of the electric field, at which the dielectric breakdown was obtained, decreased with increasing linear energy transfer (LET) of the incident ions.

引用

页码：654 / 658

页数：5

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