Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

被引：20

作者：

Beret, Dorian ^{[1
]}

Paradisanos, Ioannis ^{[1
]}

Lamsaadi, Hassan ^{[2
]}

Gan, Ziyang ^{[3
]}

Najafidehaghani, Emad ^{[3
]}

George, Antony ^{[3
,4
]}

Lehnert, Tibor ^{[5
,10
]}

Biskupek, Johannes ^{[5
]}

Kaiser, Ute ^{[5
]}

Shree, Shivangi ^{[6
]}

Estrada-Real, Ana ^{[1
,7
]}

Lagarde, Delphine ^{[1
]}

Marie, Xavier ^{[1
]}

Renucci, Pierre ^{[1
]}

Watanabe, Kenji ^{[8
]}

Taniguchi, Takashi ^{[9
]}

Weber, Sebastien ^{[2
]}

Paillard, Vincent ^{[2
]}

Lombez, Laurent ^{[1
]}

Poumirol, Jean-Marie ^{[2
]}

Turchanin, Andrey ^{[3
,4
]}

Urbaszek, Bernhard ^{[1
,7
]}

机构：

[1] Univ Toulouse, INSA CNRS UPS, LPCNO, 135 Ave Rangueil, F-31077 Toulouse, France

[2] Univ Toulouse, CEMES CNRS, Toulouse, France

[3] Friedrich Schiller Univ Jena, Inst Phys Chem, D-07743 Jena, Germany

[4] Abbe Ctr Photon, D-07745 Jena, Germany

[5] Ulm Univ, Cent Facil Electron Microscopy, Grp Mat Sci Electron Microscopy, D-89081 Ulm, Germany

[6] Univ Washington, Dept Phys, Seattle, WA 98195 USA

[7] Tech Univ Darmstadt, Inst Condensed Matter Phys, Darmstadt, Germany

[8] Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[9] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[10] Karlsruhe Inst Technol, Lab Electron Microscopy, D-76131 Karlsruhe, Germany

来源：

NPJ 2D MATERIALS AND APPLICATIONS | 2022年 / 6卷 / 01期

关键词：

EPITAXIAL-GROWTH; MONOLAYER; PHOTOLUMINESCENCE; EMISSION; SINGLE; MOS2;

D O I：

10.1038/s41699-022-00354-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy of CVD grown MoSe2-WSe2 lateral heterostructures, encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal optical transition linewidths similar to high quality exfoliated monolayers, while PL imaging experiments uncover the effective excitonic diffusion length of both materials. The typical extent of the covalently bonded MoSe2-WSe2 heterojunctions is 3 nm measured by scanning transmission electron microscopy (STEM). Tip-enhanced, sub-wavelength optical spectroscopy mapping shows the high quality of the heterojunction which acts as an excitonic diode resulting in unidirectional exciton transfer from WSe2 to MoSe2.

引用

页数：8

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