Thermal analysis for GaN laser diodes

被引：31

作者：

Hatakoshi, G ^{[1
]}

Onomura, M ^{[1
]}

Yamamoto, M ^{[1
]}

Nunoue, S ^{[1
]}

Itaya, K ^{[1
]}

Ishikawa, M ^{[1
]}

机构：

[1] Toshiba Corp, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 5A期

关键词：

numerical analysis; device simulation; semiconductor laser; GaN; thermal resistance; operation temperature;

D O I：

10.1143/JJAP.38.2764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improvement in temperature characteristics' of GaN laser diodes is important for realizing reliable devices operating, at high. temperatures Thermal characteristics of GaN lasers have been analyzed by using a three-dimensional thermal conduction model. Maximum operation temperature has also been calculated. It was shown that the reduction in the stripe width as well as the reduction in threshold current density and operation voltage is very important for improving the temperature characteristics of GaN laser diodes.

引用

页码：2764 / 2768

页数：5

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