Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (-201) Bulk β-Ga2O3

被引：19

作者：

Fares, Chaker ^{[1
]}

Tadjer, Marko J. ^{[2
]}

Woodward, Jeffrey ^{[3
]}

Nepal, Neeraj ^{[2
]}

Mastro, Michael A. ^{[2
]}

Eddy, Charles R., Jr. ^{[2
]}

Ren, Fan ^{[1
]}

Pearton, Stephen J. ^{[1
]}

机构：

[1] Univ Florida, Gainesville, FL 32611 USA

[2] Naval Res Lab, Washington, DC 20375 USA

[3] NRL, Washington, DC USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2019年 / 8卷 / 07期

关键词：

EPITAXIAL-GROWTH; THIN-FILMS; LAYER; EDGE; GAP;

D O I：

10.1149/2.0281907jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Valence and conduction band offsets of the InN/beta-Ga2O3 type-I heterojunction have been determined to be -0.55 +/- 0.11 eV and -3.35 +/- 0.11 eV, respectively, using X-ray photoelectron spectroscopy. The InN layers were grown using atomic layer epitaxy on (-201) oriented commercial beta-Ga2O3 substrates. Combining this data with published band offsets for the GaN and AlN heterojunctions to beta-Ga2O3 has allowed us to predict the band offsets for the AlGaN, AlInN, and InGaN ternary alloys to beta-Ga2O3. The conduction band offsets for InGaN and AlInN to beta-Ga2O3 increased for high In concentration and, similarly, the valence band offsets for AlGaN and AlInN to beta-Ga2O3 decreased at high Al concentration. (C) The Author(s) 2019. Published by ECS.

引用

页码：Q3154 / Q3158

页数：5

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