Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (-201) Bulk β-Ga2O3

被引：19
|
作者：
Fares, Chaker [1 ]
Tadjer, Marko J. [2 ]
Woodward, Jeffrey [3 ]
Nepal, Neeraj [2 ]
Mastro, Michael A. [2 ]
Eddy, Charles R., Jr. [2 ]
Ren, Fan [1 ]
Pearton, Stephen J. [1 ]
机构：
[1] Univ Florida, Gainesville, FL 32611 USA
[2] Naval Res Lab, Washington, DC 20375 USA
[3] NRL, Washington, DC USA
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2019年 / 8卷 / 07期
关键词：
EPITAXIAL-GROWTH; THIN-FILMS; LAYER; EDGE; GAP;
D O I：
10.1149/2.0281907jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Valence and conduction band offsets of the InN/beta-Ga2O3 type-I heterojunction have been determined to be -0.55 +/- 0.11 eV and -3.35 +/- 0.11 eV, respectively, using X-ray photoelectron spectroscopy. The InN layers were grown using atomic layer epitaxy on (-201) oriented commercial beta-Ga2O3 substrates. Combining this data with published band offsets for the GaN and AlN heterojunctions to beta-Ga2O3 has allowed us to predict the band offsets for the AlGaN, AlInN, and InGaN ternary alloys to beta-Ga2O3. The conduction band offsets for InGaN and AlInN to beta-Ga2O3 increased for high In concentration and, similarly, the valence band offsets for AlGaN and AlInN to beta-Ga2O3 decreased at high Al concentration. (C) The Author(s) 2019. Published by ECS.
引用
收藏
页码：Q3154 / Q3158
页数：5
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