The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

被引：37

作者：

Chaoumead, Accarat ^{[1
]}

Sung, Youl-moon ^{[1
]}

Kwak, Dong-Joo ^{[1
]}

机构：

[1] Kyungsung Univ, Dept Elect Engn, Pusan 608736, South Korea

来源：

ADVANCES IN CONDENSED MATTER PHYSICS | 2012年 / 2012卷

关键词：

D O I：

10.1155/2012/651587

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20 similar to 60 nm/min under the experimental conditions of 5 similar to 20 mTorr of gas pressure and 220 similar to 350 W of RF power. The lowest volume resistivity of 1.2 x 10(-4) Omega-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of 1.2 x 10(-4) Omega-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.

引用

页数：7

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