A 2x2 MIMO Multi-band RF Transceiver and Power Amplifier for Compact LTE Small Cell Base Station

被引：0

作者：

Lim, Kyoohyun ^{[1
]}

Lee, Hui Dong ^{[2
]}

Ahn, Hyunjin ^{[3
]}

Lee, Sanghoon ^{[1
]}

Jang, Seunghyun ^{[2
]}

Baek, Seungjun ^{[3
]}

Moon, Byeongmoo ^{[1
]}

Lee, Yongha ^{[1
]}

Shin, Hwahyeong ^{[1
]}

Kim, Seungbeom ^{[1
]}

Lee, Jinhyeok ^{[1
]}

Lee, Hyungsuk ^{[1
]}

Kang, Kisub ^{[1
]}

Shim, Hyunchul ^{[1
]}

Sung, Cheolhoon ^{[1
]}

Park, Geumyoung ^{[1
]}

Lee, Garam ^{[1
]}

Kim, Minjung ^{[1
]}

Park, Seokyoung ^{[1
]}

Jung, Hyosun ^{[1
]}

Lee, Ockgoo ^{[3
]}

Park, Bonghyuk ^{[2
]}

Lee, Jongryul ^{[1
]}

机构：

[1] Future Commun IC Inc FCI, Seongnam 13486, South Korea

[2] Elect & Telecommun Res Inst, Daejeon 34129, South Korea

[3] Pusan Natl Univ, Busan, South Korea

来源：

2017 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2017年

关键词：

RF transceiver; direct-conversion; power amplifier; LTE-A; small cell; femtocell; base station; CMOS; InGaP/GaAs HBT; third-order intermodulation distortion; SiP;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a fully integrated 2x2 MIMO CMOS LTE RF transceiver along with multi-band InGaP/GaAs HBT power amplifiers for LTE-A small cell (femtocell) base stations. The transceiver features highly integrated LNAs and drive amplifiers with 24 individual RF I/O pins. The multi-band PAs achieves ACLR <-45dBc at 25dBm with PAE >38% at 33dBm by employing a third-order intermodulation distortion (IMD3) canceling techniques. The presented SiP composed of proposed radio and PAs shows plenty of margins in radio conformal test of femtocell base station using a commercial modem.

引用

页码：37 / 39

页数：3

共 7 条

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