The Dependence of Poly-crystalline SiC Mid-Infrared Optical Properties on Deposition Conditions

被引：1
|
作者：
Provine, J. [1 ]
Roper, Christopher [2 ]
Schuller, Jon A. [3 ]
Brongersma, Mark L. [3 ]
Maboudian, Roya [2 ]
Howe, Roger T. [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, 127X Allen CIS Bldg, Stanford, CA 94305 USA
[2] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA USA
[3] Stanford Univ, Gaballe Lab Adv Materials, Stanford, CA 94305 USA
来源：
2008 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS | 2008年
关键词：
Nanophotonics; Plasmonics; Silicon Carbide; mid-Infrared;
D O I：
10.1109/OMEMS.2008.4607889
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on experimental measurements of the optical properties of thin films of poly-crystalline silicon carbide (poly-SiC) deposited by means of low pressure chemical vapor deposition (LPCVD). Measurements in the mid-IR region of the EM spectrum show strong dependence of both far field transmission and surface modes upon the deposition conditions including doping levels, ratio of dichlorosilane (DCS) to 1,3 disilabutane (DSB), and anneals performed on the film. We observe the link between the relative strength of near field phonon polariton resonances, the appearance of a polariton gap, and the achievement of extraordinary optical transmission (EOT).
引用
收藏
页码：182 / +
页数：2
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