Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides

被引：64
作者：
Liu, Y [1 ]
Tsang, HK [1 ]
机构：
[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
来源：
OPTICS LETTERS | 2006年 / 31卷 / 11期
关键词：
D O I：
10.1364/OL.31.001714
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We study whether helium ion implantation can reduce the carrier lifetime and thus reduce the density of two-photon-absorption-generated free carriers. Our experiments and theoretical model show that helium ion implantation into silicon waveguides can successfully reduce the free-carrier losses and allow net gain to be attained by cw-pumped stimulated Raman scattering without requiring reverse bias to remove the photo-generated free carriers. (c) 2006 Optical Society of America
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收藏
页码：1714 / 1716
页数：3
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