Numerical simulation of multiple polysilicon CVD reactors connected in series using CFD method

This study proposes a novel process in which multiple polysilicon chemical vapour deposition ( CVD) reactors are connected in series, and this setup is investigated using computational fluid dynamics ( CFD). A three-dimensional CFD theoretical model is proposed to describe the various transport phenomena in the reactor, and this model is validated by comparing the reactor outlet temperatures of the simulation results and the data obtained using an industrial polysilicon CVD reactor. This model was then used for analyzing the production cost and growth rate of the traditional and proposed CVD processes. The simulation results show that the polysilicon production cost in the traditional and proposed processes is lowest for 0.091 mol/ mol ( 9.1 mol%); the maximum deposition rate is achieved for 0.25 mol/ mol ( 25 mol%). On the other hand, if the operation pressure increases from 101 to 607 kPa, the average production cost can be reduced from 86.26 to 39.88 $/ kg; and the average growth rate can be raised from 1.68 to 4.18mm mu min . 1. In addition, compared with the 1- reactor process, the cost of the 2- reactor process is 21.9% lower, and the 3- reactor process is 26.9% lower. Finally, in the novel process, changing the chlorine hydride of the feed in the reactor 2 from 0.1 g/ g ( 10 wt%) to 0.02 g/ g ( 2 wt%), the average production cost can be reduced by 35.5 %.