Impact of Process Variability on FintFET 6T SRAM Cells for Physical Unclonable Functions (PUFs)

被引：0

作者：

Faragalla, M. R. ^{[1
]}

Ewais, M. A. ^{[1
]}

Ragai, H. F. ^{[1
]}

Badran, Mahmoud S. ^{[2
]}

Issa, Hanady H. ^{[2
]}

机构：

[1] Ain Shams Univ, Fac Engn, Elect & Commun Engn Dept, Cairo, Egypt

[2] Arab Acad Sci & Technol, Dept Elect & Commun, Cairo, Egypt

来源：

2017 12TH INTERNATIONAL CONFERENCE ON COMPUTER ENGINEERING AND SYSTEMS (ICCES) | 2017年

关键词：

Physical Unclonable Functions (PUFs); SRAM; FinFET; Variability; Hardware Security;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The behavior of 6T SRAM cells in presence of process variability for physical unclonable functions (PUFs) is analyzed on the 16 nm FinFET technology. Both systematic and random threshold voltage variations are considered in this analysis. Randomness prosperity of the secret keys generated front the SRAM cell is tested. Supply voltage ramp-up impact on the cells start-up values is also analyzed at different mismatch amounts.

引用

页码：31 / 36

页数：6

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