Study of the electroluminescence performance of NiO-based quantum dot light-emitting diodes: The effect of annealing atmosphere

被引：15

作者：

Zhang, Yidong ^{[1
]}

Zhao, Lei ^{[2
]}

Jia, Huimin ^{[1
]}

Li, Pinjiang ^{[1
]}

机构：

[1] Xuchang Univ, Inst Surface Micro & Nano Mat, Key Lab Micronano Energy Storage & Convers Mat He, Xuchang 461000, Peoples R China

[2] Lanzhou City Univ, Sch Elect & Informat Engn, Lanzhou 730070, Gansu, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2020年 / 526卷

基金：

中国国家自然科学基金;

关键词：

Nickel oxide (NiO); Thin films; Ultraviolet ozone treatment; Annealing; Quantum dot light-emitting diodes (QLEDs); HOLE TRANSPORT LAYER; NICKEL-OXIDE; SOLAR-CELLS; THIN-FILMS; DOPED NIO; FABRICATION; TEMPERATURE; EFFICIENT; OZONE;

D O I：

10.1016/j.apsusc.2020.146732

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

NiO is fabricated by a simple solvothermal reaction using tert-butyl alcohol and nickel acetylacetonate as precursors at 200 degrees C for 20 h. NiO nanocrystals were dispersed in ethanol followed by a spinning coating technique on indium tin oxide (ITO) substrates to form NiO coating as a hole injection layer in quantum dot light-emitting diodes (QLEDs). NiO coating is annealed in ultraviolet ozone, air and nitrogen atmosphere, respectively. NiO coating is analyzed by ways of atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and Hall effect measurements. Electroluminescence performance of NiO-based QLEDs is enhanced after ultraviolet ozone treatment due to the increased conductivity of NiO coating.

引用

页数：7

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