The inelastic thermal spike model applied to metal/insulator interfaces

被引：7

作者：

Chettah, A. ^{[1
]}

Amekura, H. ^{[2
]}

Baeker, R. ^{[1
]}

Kucal, H. ^{[3
,4
]}

Takeda, Y. ^{[2
]}

Matsuda, M. ^{[5
]}

Iwase, A. ^{[6
]}

机构：

[1] Univ 20 Aout 1955 Skikda, Funct Mat Grp, LGMM Lab, Skikda 21000, Algeria

[2] NIMS, Tsukuba, Ibaraki 3050003, Japan

[3] ENSICAEN, CNRS, CEA, CIMAP Lab, F-14070 Caen 5, France

[4] Univ Caen, F-14070 Caen 5, France

[5] JAEA, Tokai, Ibaraki 3191195, Japan

[6] Osaka Prefecture Univ, Dept Mat Sci, Sakai, Osaka 5998531, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 1-2 | 2015年 / 12卷 / 1-2期

关键词：

ion beam mixing; swift heavy ion irradiation; metal insulator interfaces; diffusion coefficient; HEAVY-ION IRRADIATION; ELECTRONIC EXCITATIONS; INORGANIC INSULATORS; MULTILAYERS; RELAXATION; BILAYERS; CREATION; LATTICE; METALS; DAMAGE;

D O I：

10.1002/pssc.201400149

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recently, inter-diffusion induced by 200 MeV Xe ion irradiation in metal-insulator interfaces (Bi/Al2O3 and Au/Al2O3) was investigated experimentally via in-situ RBS measurements using 16 MeV C ions. In this work, the experimental results were tried to be explained by the inelastic thermal spike model (ITSM). Although these results explained qualitatively the inter-diffusion, the experimentally observed diffusion length (similar to 800 nm) at a fluence value of 7 x 10(13)cm(-2) was much larger than the estimated maximum value within the ITSM (similar to 80 nm). It was found that the Bi concentration profiles measured via in-situ RBS could not be fitted by simple diffusional ones. We suggested that the main responsible of the huge atomic diffusion exhibited by Bi in Al2O3 could be the directional motion of Bi atoms in molten Al2O3 triggered off by the pressure due to liquid-vapor phase transition of Bi near the interface. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：102 / 106

页数：5

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